Modification of critical current density of MgB[sub 2] films irradiated with 200 MeV Ag ions

Shinde, S.R.; Ogale, S.B.; Higgins, J.; Choudhary, R.J.; Kulkarni, V.N.; Venkatesan, T.; Zheng, H.; Ramesh, R.; Pogrebnyakov, A.V.; Xu, S.Y.; Qi Li; Xi, X.X.; Redwing, J.M.; Kanjilal, D.
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2352
Academic Journal
The effect of 200 MeV Ag ion irradiation on the temperature and field dependence of critical current density (J[sub C]) of high quality MgB[sub 2] thin films is studied. Substantial increase in J[sub C] is observed over a certain field range for the film irradiated at a dose of 10[sup 12] ions/cm[sup 2]. Our analysis suggests that columnar defects are not formed under irradiation conditions used in these studies, which correspond to an electronic energy loss of about 16 keV/nm. Defects clusters are likely to be responsible for the observed improvement in J[sub C].© 2004 American Institute of Physics.


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