Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

Shimada, Takashi; Sugai, Toshiki; Ohno, Yutaka; Kishimoto, Shigeru; Mizutani, Takashi; Yoshida, Hiromichi; Okazaki, Toshiya; Shinohara, Hisanori
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2412
Academic Journal
Double-wall carbon nanotubes (DWNTs) have been used as channels of field-effect transistors (FETs) to obtain information on their transport characteristics. DWNTs-FETs show metallic or semiconducting behavior depending on the tube diameters. All the semiconducting DWNTs have exhibited both p- and n-type characteristics, the so-called ambipolar behavior which is absent in normal SWNTs-FETs. Comparisons between the subthreshold swing (S) factor of DWNTs and that of SWNTs indicate that DWNTs are better FET channels than SWNTs. © 2004 American Institute of Physics.


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