TITLE

Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

AUTHOR(S)
Shimada, Takashi; Sugai, Toshiki; Ohno, Yutaka; Kishimoto, Shigeru; Mizutani, Takashi; Yoshida, Hiromichi; Okazaki, Toshiya; Shinohara, Hisanori
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2412
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Double-wall carbon nanotubes (DWNTs) have been used as channels of field-effect transistors (FETs) to obtain information on their transport characteristics. DWNTs-FETs show metallic or semiconducting behavior depending on the tube diameters. All the semiconducting DWNTs have exhibited both p- and n-type characteristics, the so-called ambipolar behavior which is absent in normal SWNTs-FETs. Comparisons between the subthreshold swing (S) factor of DWNTs and that of SWNTs indicate that DWNTs are better FET channels than SWNTs. © 2004 American Institute of Physics.
ACCESSION #
12606829

 

Related Articles

  • Device characteristics of carbon nanotube transistor fabricated by direct growth method. Inami, Nobuhito; Mohamed, Mohd Ambri; Shikoh, Eiji; Fujiwara, Akihiko // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p243115 

    We have fabricated carbon nanotube (CNT) field-effect transistors (FETs) by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device...

  • Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors. de Boer, R. W. I.; Iosad, N. N.; Stassen, A. F.; Klapwijk, T. M.; Morpurgo, A. F. // Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p032103 

    We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results...

  • MOSFETs and IGBTs differ in drive methods and protection needs. Travis, Bill // EDN;3/1/96, Vol. 41 Issue 5, p123 

    Discusses the difference of metal oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) in drive methods and protection needs. Device characteristics; Trade-off in conduction loss and voltage ratings for MOSFETs; Low on-state losses with IGBTs. ...

  • IGBTs or MOSFETs: Which is better for your design? Blake; Bull, Carl // Electronic Design;10/04/99, Vol. 47 Issue 20, p77 

    Compares the metal oxide semiconductor field-effect transistors (MOSFET) and the insulated-gate bipolar transistor (IGBT). Disadvantages of the IGBT; Example of an application that falls into the crossover area between IGBT and MOSFET; Examination of variations in ambient temperature, line...

  • From MOSFETS to MCTs.  // Machine Design;10/26/95, Vol. 67 Issue 19, p102 

    Focuses on metal oxide semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs) and metal oxide semiconductor-controlled thyristors (MCTs). Features and capabilities; Applications; Comparison among the transistors.

  • p-p isotype organic heterojunction and ambipolar field-effect transistors. Haibo Wang; Xiujin Wang; Bo Yu; Yanhou Geng; Donghang Yan // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p113303 

    We realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2′; 7′, 2″-terphenanthrenyl (Ph3) and vanadyl-phthalocyanine (VOPc). The ambipolar charge...

  • Doping Concentrations Analysis on The Performance of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP). Mohd Ismail Saad; Zuhir, H.; Bun Seng, C.; Khairul, A. M.; Ghosh, Bablu; Bolong, N.; Ismail, Razali // International Journal of Simulation -- Systems, Science & Techno;2014, Vol. 15 Issue 2, p24 

    The Vertical Strained SiGe Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The effect of doping concentration for both Source and Drain (S/D) as well as body doping concentration to the performance of VESIMOS-DP in...

  • All about transistors: FET's. Young, Robert A. // Popular Electronics;May94, Vol. 11 Issue 5, p71 

    Traces the development of the field-effect transistor (FET). Bipolar transistors; FET operation; Metal-oxide semiconductor FET (MOSFET) and enhancement MOSFET; CMOS technology.

  • Depletion-mode mosfet kick starts power. Mirsky, Gregory // Electronics Weekly;10/15/2008, Issue 2356, p16 

    The article presents information on bipolar transistors or MOSFETs. As reported, these transistors provide the initial current for the flyback or power factor-correction (PFC) chip. It is also reported that such schemes reduce the power consumption of the kick-start circuitry because the active...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics