Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

Cheng-Xin Wang, Gerard; Guo-Wei Yang, Gerard; Hong-Wu Liu, Gerard; Yong-Hao Han, Gerard; Ji-Feng Luo, Gerard; Chun-Xiao Gao, Gerard; Guang-Tian Zou, Gerard
March 2004
Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2427
Academic Journal
High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the I[sub o]-type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n>2.0) in the prepared ZnO/diamond p–n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p–n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode. © 2004 American Institute of Physics.


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