Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers

Li, W.; Héroux, J. B.; Shao, H.; Wang, W. I.
March 2004
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2016
Academic Journal
The use of strain-compensated InGaAsSb/AlGaAsSb quantum wells for the fabrication of type I mid-infrared laser devices grown on GaSb substrates by molecular-beam epitaxy is reported. The creation of a tensile strain in the Al[sub 0.25]Ga[sub 0.75]As[sub y]Sb[sub 1-y] barriers by the incorporation of an arsenic fraction greater than 2% allows to reduce the average strain in the active region and increase the valence band offset to improve hole confinement in the wells. A 2.82 μm emission wavelength in pulsed mode along with a 660 A/cm[sup 2] threshold current density are obtained at room temperature for a type I InGaAsSb/AlGaAsSb double-quantum-well laser diode. By further increasing the indium and arsenic compositions into the wells and barriers, respectively, pulsed lasing at a wavelength of 2.89 μm at room temperature has also been achieved. © 2004 American Institute of Physics.


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