Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Pawlak, B. J.; Surdeanu, R.; Colombeau, B.; Smith, A. J.; Cowern, N. E. B.; Lindsay, R.; Vandervorst, W.; Brijs, B.; Richard, O.; Cristiano, F.
March 2004
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2055
Academic Journal
We investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed information on the thermal stability of the boron activation. Using a previously established model of self-interstitial defect evolution from clusters to dislocation loops, we perform simulations of the release of interstitials from the end-of-range region. The simulations indicate that the measured deactivation is driven by interstitials emerging from the end-of-range defect region. © 2004 American Institute of Physics.


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