Competing processes in the surface ordering of InAs islands using a subsurface island superlattice

Solomon, G. S.
March 2004
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2073
Academic Journal
A subsurface island superlattice is used to create surface spatial ordering in strain-induced InAs islands of quantum-dot scale deposited on (001) GaAs. A rectangular surface unit cell is demonstrated and its structure is attributed to competition between two surface diffusion processes, those related to surface reconstruction and those related to the subsurface island strain. Because the ratio of nearest-neighbor positions does not allow for full translation of the unit cell, only a weakly defined lattice is present which is optimized by controlling the crystal growth process. © 2004 American Institute of Physics.


Related Articles

  • Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy. Maronchuk, I. E.; D'yachenko, A. M.; Minailov, A. I.; Kurak, V. V.; Chorny, I. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2004, Vol. 7 Issue 4, p363 

    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good...

  • GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature. Xu, Tao; Zhou, Lin; Wang, Yiyi; Özcan, Ahmet S.; Ludwig, K. F.; Smith, David J.; Moustakas, T. D. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p073517 

    In this paper, we report the growth of GaN quantum dot superlattices (QDSLs) with AlN barriers on (0001) sapphire substrates by molecular beam epitaxy at relatively high temperature (770 °C) using the modified Stranski-Krastanov growth mode. Observations with atomic force microscopy show that...

  • Self-assembly of silicide quantum dot arrays on stepped silicon surfaces by reactive epitaxy. Fernández, L.; Löffler, M.; Cordón, J.; Ortega, J. E. // Applied Physics Letters;12/24/2007, Vol. 91 Issue 26, p263106 

    Reactive epitaxy of Co on vicinal Si(111) surfaces is found to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots. In the present work, submonolayer amounts of Co were deposited at 800 K on vicinal and flat Si surfaces, analyzing the resulting...

  • Spatial Diffusion Of Carriers In A Quantum Dot System Grown By Shadow Mask Controlled Epitaxy. Mackowski, S.; Gurung, T.; Haque, F.; Jackson, H. E.; Smith, L. M.; Schallenberg, T.; Brunner, K.; Molenkamp, L. W. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p657 

    We report on the optical properties of a quantum dot (QD) structure grown by shadow mask-controlled epitaxy. In this method the dots are grown in a number of very small islands spaced by 1 micron from each other and connected through a uniform 800 nm-wide wire-like barrier. We find that if...

  • Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN/GaN heterostructures. Lorenzini, P.; Bougrioua, Z.; Tiberj, A.; Tauk, R.; Azize, M.; Sakowicz, M.; Karpierz, K.; Knap, W. // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p232107 

    The transport and quantum lifetimes were respectively deduced from low-temperature mobility and Shubnikov–de Haas measurements as a function of carrier density in metal organic vapor phase epitaxy-grown AlGaN/GaN/sapphire heterostructures. We show experimentally that the lifetime ratio...

  • Ordering of high-quality InAs quantum dots on defect-free nanoholes. Jong Su Kim; Kawabe, Mitsuo; Koguchi, Nobuyuki // Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p072107 

    We demonstrate a promising way for the fabrication of high-quality InAs quantum dot (QD) arrays by combining atomic force microscope (AFM) tip-induced nano-oxidation, atomic-hydrogen etching/cleaning (AHE/C), and droplet epitaxy method. The highly aligned defect-free nanoholes as nucleation...

  • Semiconductor superlattices with periodic disorder. Jiang, H. X.; Lin, J. Y. // Journal of Applied Physics;3/15/1988, Vol. 63 Issue 6, p1984 

    Presents a study which investigated the band structure of semiconductor superlattices with periodic disorder. Advances in epitaxial crystal growth techniques; Types of fluctuation distributions; Results and discussion; Conclusions.

  • Ge/Si Photodiodes and Phototransistors with Embedded Arrays of Germanium Quantum Dots for Fiber-Optic Communication Lines. Yakimov, A. I.; Dvurechenski&ibreve;, A. V.; Kirienko, V. V.; Nikiforov, A. I. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p34 

    Photodetectors based on Ge/Si multilayer heterostructures with germanium quantum dots are fabricated for use in fiber-optic communication lines operating in the wavelength range 1.30–1.55μm. These photodetectors can be embedded in an array of photonic circuit elements on a single...

  • Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography. Smagina, Zh. V.; Stepina, N. P.; Zinovyev, V. A.; Novikov, P. L.; Kuchinskaya, P. A.; Dvurechenskii, A. V. // Applied Physics Letters;10/13/2014, Vol. 105 Issue 15, p1 

    An original approach based on the combination of nanoimprint lithography and ion irradiation through mask has been developed for fabrication of large-area periodical pattern on Si(100). Using the selective etching of regions amorphized by ion irradiation ordered structures with grooves and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics