TITLE

Competing processes in the surface ordering of InAs islands using a subsurface island superlattice

AUTHOR(S)
Solomon, G. S.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2073
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A subsurface island superlattice is used to create surface spatial ordering in strain-induced InAs islands of quantum-dot scale deposited on (001) GaAs. A rectangular surface unit cell is demonstrated and its structure is attributed to competition between two surface diffusion processes, those related to surface reconstruction and those related to the subsurface island strain. Because the ratio of nearest-neighbor positions does not allow for full translation of the unit cell, only a weakly defined lattice is present which is optimized by controlling the crystal growth process. © 2004 American Institute of Physics.
ACCESSION #
12530508

 

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