TITLE

Spatial phase separation of GaN selectively grown on a nanoscale faceted Si surface

AUTHOR(S)
Lee, S. C.; Sun, X. Y.; Hersee, S. D.; Brueck, S. R.; Xu, H.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2079
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports the growth of spatially separated hexagonal and cubic phases of GaN on a patterned Si(001) substrate by metalorganic vapor-phase epitaxy. The substrate surface was patterned with grooves having a 355 nm period. Each groove consisted of two opposed Si{111} facets that were separated by Si(001) surfaces. Epitaxial growth of GaN on this substrate began selectively on the Si{111} facets and yielded the GaN hexagonal phase. With further growth, the two hexagonal phase regions separately grown on the opposed Si{111} facets coalesced, with strongly misaligned c axes (∼110°). The GaN grown after coalescence was subsequently confirmed, by transmission electron microscopy and photoluminescence, to be of cubic phase. © 2004 American Institute of Physics.
ACCESSION #
12530506

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics