TITLE

Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face

AUTHOR(S)
Fukuda, Kenji; Kato, Makoto; Kojima, Kazutoshi; Senzaki, Junji
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2088
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of gate oxidation method on the electrical properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on 4H-SiC C(0001) face has been investigated. In the case of SiC MOSFETs fabricated by dry gate oxidation, the peak value of field-effect mobility (μ[sub FE]) is 16.3 cm[sup 2]/V s. On the other hand, pyrogenic gate oxidation and pyrogenic gate oxidation followed by H[sub 2] postoxidation annealing (POA) considerably decreased the interface trap density (D[sub it]) and the threshold voltage, and markedly improved the μ[sub FE]. The depth profiles of hydrogen density were measured using secondary ion mass spectroscopy. These verified that pyrogenic gate oxidation increases hydrogen density at the SiO[sub 2]/SiC interface compared to dry gate oxidation, and that the pyrogenic gate oxidation followed by H[sub 2] POA increases considerably it. It is thought that the D[sub it] reduction might be caused by the passivation of interface states by –H or –OH. The peak value of μ[sub FE] for SiC MOSFETs fabricated by pyrogenic gate oxidation followed by H[sub 2] POA is 111 cm[sup 2]/V s, which is much higher than that of SiC MOSFETs fabricated on a Si(0001) face. Therefore, the 4H-SiC C(0001) face is suitable for the fabrication of SiC power MOSFETs. © 2004 American Institute of Physics.
ACCESSION #
12530503

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics