Picosecond response of gallium-nitride metal–semiconductor–metal photodetectors

Li, Jianliang; Xu, Ying; Hsiang, T. Y.; Donaldson, W. R.
March 2004
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2091
Academic Journal
Metal–semiconductor–metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. A device with a feature size of 1 μm showed a response with 1.4 ps rise time and 3.5 ps full width at half maximum. The derived electron velocity, 1.43×10[sup 7] cm/s, is in good agreement with independent photoexcitation measurements. A slower impulse response was observed in a device with smaller feature size of 0.5 μm. © 2004 American Institute of Physics.


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