TITLE

Memory effect of oxide/SiC:O/oxide sandwiched structures

AUTHOR(S)
Chang, T. C.; Yan, S. T.; Yang, F. M.; Liu, P. T.; Sze, S. M.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2094
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC:O film, which is attributed to the high barrier height induced by electron trapping in the SiC:O film. © 2004 American Institute of Physics.
ACCESSION #
12530501

 

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