High-resolution mapping of nonuniform carrier transport at contacts to polycrystalline CdTe/CdS solar cells

Sutter, P.; Sutter, E.; Ohno, T. R.
March 2004
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2100
Academic Journal
We demonstrate a spectroscopic technique based on scanning tunneling microscopy that provides high-resolution maps of local carrier transport across contacts to polycrystalline thin-film solar cells. Using this technique, preferential transport channels across a p[sup +]-ZnTe/p-CdTe back contact of a p-CdTe/n-CdS solar cell are imaged with 20 nm spatial resolution. Transport across this contact is highly nonuniform. Large areas of high resistance coexist with nanoscale low-resistance regions that are strongly correlated with grain boundaries in the CdTe absorber. These results suggest an important role of grain boundaries as near-contact conducting channels. © 2004 American Institute of Physics.


Related Articles

  • Solar Cells Based on CuIn[sub 1 — ][sub x]Ga[sub x]Se[sub 2] Films Obtained by Pulsed Laser Evaporation. Gremenok, V. F.; Bodnar’, I. V.; Rud’, V. Yu.; Rud’, Yu. V.; Schock, H.-W. // Semiconductors;Mar2002, Vol. 36 Issue 3, p340 

    Solar cells based on polycrystalline films of CuIn[sub 1-x]Ga[sub x]Se[sub 2] solid solutions were produced for the first time by the pulsed laser evaporation of source targets. The current-voltage characteristics of the cells were investigated, and the main photoelectrical parameters were...

  • Polycrystalline thin-film Cu2-xSe/CdS solar cell. Chen, Wen S.; Stewart, J. M.; Mickelsen, R. A. // Applied Physics Letters;6/1/1985, Vol. 46 Issue 11, p1095 

    The development of a polycrystalline thin-film solar cell utilizing a backwall designed heterojunction structure based upon p-type Cu2-xSe and n-type CdS semiconductor materials is described. The electrical, optical, and structural properties of the deposited thin-film materials are described. A...

  • Junction sharpness in field-induced transistor structures in CuxAg1-xInSe2. McAlpine, N. S.; McConville, P.; Haneman, D.; Chernyak, L.; Cahen, D. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p7370 

    Examines the widths of the transition regions at p-n-p junctions that are formed on Cu[subx]Ag[sub1-x]InSe[sub2] by high electric field at room temperature using a scanning tunneling microscope. Description on a three-dimensional picture obtained of a p-n-p structure created in the bulk...

  • Enhanced tunneling across nanometer-scale metal–semiconductor interfaces. Smit, G. D. J.; Rogge, S.; Klapwijk, T. M. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2568 

    We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi[sub 2] islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area....

  • Applicability of the Meyer-Neldel rule to solar cells. Goradia, Chandra; Weizer, Victor G. // Applied Physics Letters;1984, Vol. 45 Issue 12, p1298 

    A comparison of data taken on high quality silicon, GaAs, and GaInAs solar cells with those taken on a variety of homojunction, heterojunction, and metal-insulator-semiconductor devices indicates that while the Meyer-Neldel rule may be applicable to certain types of solar cells it is not...

  • Nanometer-scale recording on an organic-complex thin film with a scanning tunneling microscope. Ma, L. P.; Song, Y. L.; Gao, H. J.; Zhao, W. B.; Chen, H. Y.; Xue, Z. Q.; Pang, S. J. // Applied Physics Letters;12/9/1996, Vol. 69 Issue 24, p3752 

    Nanometer-scale recording on an organic-complex thin film with a scanning tunneling microscope (STM) under ambient conditions is demonstrated. The recording marks are made by applying external voltage pulses between the tip and the highly ordered pyrolytic graphite substrate. A 30×30 nm2 STM...

  • Scanning tunneling microscopy on rough surfaces: Tip-shape-limited resolution. Reiss, G.; Vancea, J.; Wittmann, H.; Zweck, J.; Hoffmann, H. // Journal of Applied Physics;2/1/1990, Vol. 67 Issue 3, p1156 

    Presents a study that discussed the reliability of scanning tunneling microscopy (STM) images of rough surfaces of polycrystalline thin films. Details of the etching procedure; Estimation of the tip shape of the rough surfaces; Comparison of the images from STM and transmission electron microscopy.

  • Strain field imaging on Si/SiGe(001)-(2×1) surfaces by low-energy electron microscopy and scanning tunneling microscopy. Jones, D. E.; Pelz, J. P.; Hong, Y.; Tsong, I. S. T.; Xie, Y.-H.; Silverman, P. J. // Applied Physics Letters;11/18/1996, Vol. 69 Issue 21, p3245 

    We show that ultrahigh-vacuum low-energy electron microscopy and scanning tunneling microscopy can be used to image residual uniaxial strain fields on (001) surfaces of SiGe heterostructures. We find that the surface crosshatch morphology on these films is highly correlated with large spatial...

  • Comparison of scanning probe microscopies with RBS and SEM/EDX for the analysis of RuO[sub 2] , TiO[sub 2] composites. Vallet, H.C. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 4/5, p387 

    Scanning tunneling microscopy (STM) was used in the constant height mode for analyzing the local composition of (RuO[sub 2] , TiO[sub 2] ) mixed oxide thin films. A digital processing of the images leads to a bipolar distribution of values of current that reflects the difference in conductivity...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics