TITLE

Field emission properties of heavily Si-doped AlN in triode-type display structure

AUTHOR(S)
Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using heavily Si-doped AlN, a triode-type field emission display is demonstrated. The device consists of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. The device exhibits a low turn-on electric field of 11 V/μm, and the field emission current exponentially increases as the grid voltage increases. The field emission current reaches 9.5 μA at an electric field strength of 23 V/μm. Luminescence from the phosphor excited by the field-emitted electrons is uniform over the anode screen and is intense enough for the display application. The field emission current is stable over time. © 2004 American Institute of Physics.
ACCESSION #
12530494

 

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