Azafullerene (C[sub 59]N)[sub 2] thin-film field-effect transistors

Kumashiro, Ryotaro; Tanigaki, Katsumi; Ohashi, Hirotaka; Tagmatarchis, Nikos; Kato, Haruhito; Shinohara, Hisanori; Akasaka, Takeshi; Kato, Kenichi; Aoyagi, Shinobu; Kimura, Shigeru; Takata, Masaki
March 2004
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2154
Academic Journal
Thin-film field-effect transistors (FETs) of azafullerene (C[sub 59]N)[sub 2] are fabricated, and their properties are investigated. The (C[sub 59]N)[sub 2] FET exhibits n-channel characteristics with the field-effect electron mobility of 3.8×10[sup -4] cm[sup 2] V[sup -1] s[sup -1] and the on–off current ratio of 10[sup 3] at room temperature. The observed differences are ascribed to the much smaller grain size and the worse crystallinity of (C[sub 59]N)[sub 2] thin films, on a basis of low angle x-ray diffraction structural data. The anticipated dimer to monomer conversion with electron carrier injection is not observed. The FET characteristics are discussed from the temperature evolution of the mobilities between (C[sub 59]N)[sub 2] and C[sub 60] FETs. © 2004 American Institute of Physics.


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