Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon

Wu, Biao; Cohen, Philip I.; Feldman, L. C.; Zhang, Zhenyu
March 2004
Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2175
Academic Journal
We propose a method of controlling the growth mode in an epitaxial system. It takes advantage of differences in the vibrational frequencies of adatom–substrate bonds at terraces and steps. With a properly tuned infrared laser, one can selectively excite only the adatom–substrate bonds at steps and enhance the mobility of these adatoms, consequently promoting step-flow growth and reducing film roughness. The feasibility of this method is shown theoretically with respect to the prototype system of chemical vapor deposition growth of silicon. © 2004 American Institute of Physics.


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