GSM power amplifier designed completely in CMOS

March 2004
Portable Design;Mar2004, Vol. 10 Issue 3, p44
The Si4300 monolithic dual-band Global System for Mobile Communications power amplifier is the first such device to be implemented in the complementary metal oxide semiconductors, resulting in increased integration and smaller size. This article also points out that it also opens the door to having other components integrated, further reducing cost and overall system size in future generations of products. The Si4300 uses a single die on a small ceramic substrate. It requires two external decoupling capacitors for deployment. The Si4300 can be controlled through a digital serial interface that can be connected to the same standard interface that controls most transreceiver solutions.


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