Enhanced electro-optic effect in GaInAsP–InP three-step quantum wells

Mohseni, H.; An, H.; Shellenbarger, Z.A.; Kwakernaak, M.H.; Abeles, J.H.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1823
Academic Journal
We report on the enhanced electro-optic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications. Measured electro-optic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. The enhanced electro-optic effect, combined with a low optical absorption coefficient α<1 cm[sup -1] in the 3SQW increases a modulator figure of merit by nearly 36 times, and decreases the power consumption by nearly one order of magnitude compared with a conventional RQW design. © 2004 American Institute of Physics.


Related Articles

  • Temperature dependence of the ambipolar carrier migration in a structure with InAs quantum dots grown in a strained GaInAs quantum well. Popescu, Dan P.; Eliseev, Peter G.; Malloy, Kevin J. // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p093702 

    The lateral carrier migration in a structure with InAs quantum dots (QDs) imbedded in a Ga0.85In0.15As quantum well grown on a GaAs substrate is investigated by confocal microscopy in a temperature range from 80 to 300 K. Carrier spreading is measured by recording the ground and the first...

  • Sequential resonant and nonresonant tunneling in GaAs/AlGaAs multiple quantum wells. Helgesen, P.; Finstad, T. G.; Johannessen, K. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2689 

    Investigates sequential resonant and nonresonant tunneling in doped gallium arsenide/aluminum-gallium-arsenic multiple quantum wells. Evolution from nonresonant to resonant tunneling; Changes in the conductance mechanism; Transportation of electrons by nonresonant tunneling process.

  • Growth temperature dependent band alignment at the Ga0.51In0.49P to GaAs heterointerfaces. Liu, Q.; Derksen, S.; Prost, W.; Lindner, A.; Tegude, F. J. // Journal of Applied Physics;1/1/1996, Vol. 79 Issue 1, p305 

    Focuses on a study which presented a photoluminescence (PL) analysis of gallium indium phosphide/gallium arsenide single-quantum well structures grown by metal-organic vapor-phase epitaxy. Description of the sample and procedure; Estimation of the growth temperature dependent conduction and...

  • Bias-controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser. Berthold, K.; Levi, A. F. J.; Pearton, S. J.; Malik, R. J.; Jan, W. Y.; Cunningham, J. E. // Applied Physics Letters;10/2/1989, Vol. 55 Issue 14, p1382 

    The light emission characteristic of a GaAs/AlGaAs single quantum well laser with an intracavity monolithic loss modulator has been investigated. Discrete, widely separated, wavelength switching from the first (875 nm) to the second (842 nm) subband is achieved by changing the applied modulator...

  • Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator. Arakawa, Y.; Larsson, A.; Paslaski, J.; Yariv, A. // Applied Physics Letters;3/3/1986, Vol. 48 Issue 9, p561 

    Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced...

  • Theoretical study on optimum barrier height of GaAs/AlxGa1-xAs multiple quantum well modulator: Inhomogeneous broadening effects. Lim, Kyu Nam; Hong, Songcheol; Singh, Jasprit // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p3692 

    Presents a study which examined the optimum barrier height of gallium arsenide/aluminum gallium arsenide quantum well for the static property of the optical modulator. Theoretical techniques used in the study; Exciton absorption in quantum wells; Issue on exciton line broadening.

  • Effects of well width on the characteristics of GaAs/AlGaAs multiple quantum well electroabsorption modulators. Whitehead, M.; Stevens, P.; Rivers, A.; Parry, G.; Roberts, J. S.; Mistry, P.; Pate, M.; Hill, G. // Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p956 

    We compare the characteristics of three electroabsorption modulators fabricated using GaAs/AIGaAs multiple quantum welt structures with well widths 47, 87, and 145 Ã…. We find that the narrow well structure provides the largest change in transmission. The 87 Ã… well structure provides the...

  • Cathodoluminescence investigations of GaInNAs on GaAs(111)B. Miguel-Sánchez, J.; Jahn, U.; Guzmán, A.; Muñoz, E. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p231901 

    In this work, we present a detailed cathodoluminescence characterization of GaInNAs quantum wells grown on GaAs(111)B. As-grown and annealed InGaAs and GaInNAs quantum wells were maeasured and compared by spatially resolved cathodoluminescence at different photon energies. In the case of GaInNAs...

  • Resonance Backscattering in Triangular Quantum Dots Inside a Small Ring Interferometer. Nomokonov, D. V.; Bakarov, A. K.; Bykov, A. A.; Mishchenko, A. M. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p827 

    Quasiperiodic peaks of the resistance and quasiperiodic oscillations of e.m.f. generated by microwave radiation as the functions of gate voltage were observed in the small rings fabricated on the basis of a two-dimensional electron gas in a GaAs quantum well with the AlAs/GaAs superlattice...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics