Measurement of orientation dependent stress-optic coefficient of GaAs single crystals

Peng, H.J.; Wong, S.P.; Ho, H.P.; Shounan Zhao, H.P.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1829
Academic Journal
The stress-optic coefficient C for (001) and (111) GaAs single crystal wafers at various observation directions was measured precisely using a simple four-point bending technique. Our experimental values of C for (001) GaAs wafers vary from 0.65×10[sup -12] cm[sup 2]/dyn (at <100> directions) to 1.43×10[sup -12] cm[sup 2]/dyn (at <110> directions). For (111) GaAs wafers, the experimental values of C show much smaller dependence on the observation direction and vary from 1.97×10[sup -12] cm[sup 2]/dyn (at <112> directions) to 2.11×10[sup -12] cm[sup 2]/dyn (at <110> directions). The combinations of piezo-optic coefficients π[sub 11]–π[sub 12] and π[sub 44] were also derived from C for GaAs. © 2004 American Institute of Physics.


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