TITLE

Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy

AUTHOR(S)
Ramsteiner, M.; Jiang, D.S.; Harris, J.S.; Ploog, K.H.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1859
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E[sub +] transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. The required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. This finding suggests that the nitrogen dimers are connected with nonradiative recombination centers. © 2004 American Institute of Physics.
ACCESSION #
12512699

 

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