TITLE

Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si

AUTHOR(S)
Impellizzeri, G.; dos Santos, J.H.R.; Mirabella, S.; Priolo, F.; Napolitani, E.; Carnera, A.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1862
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The amorphized samples were implanted with 7×10[sup 12], 7×10[sup 13], or 4×10[sup 14] F/cm[sup 2] at 100 keV, and afterwards recrystallized by solid phase epitaxy. Thermal anneals at 750 or 850 °C were performed in order to induce the release of self-interstitials from the end-of-range (EOR) defects and thus provoke the transient enhanced diffusion of B atoms. We have shown that the incorporation of F reduces the B enhanced diffusion in a controlled way, up to its complete suppression. It is seen that no direct interaction between B and F occurs, whereas the suppression of B enhanced diffusion is related to the F ability in reducing the excess of silicon self-interstitials emitted by the EOR source. These results are reported and discussed. © 2004 American Institute of Physics.
ACCESSION #
12512698

 

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