Reflectance anisotropy of Gd[sub 5]Si[sub 2]Ge[sub 2] and Tb[sub 5]Si[sub 2.2]Ge[sub 1.8]

Lee, S.J.; Park, J.M.; Snyder, J.E.; Jiles, D.C.; Schlagel, D.L.; Lograsso, T.A.; Pecharsky, A.O.; Lynch, D.W.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1865
Academic Journal
Reflectance difference (RD) spectra for the a–b plane of the single crystals of Gd[sub 5]Si[sub 2]Ge[sub 2] and b–c planes of Gd[sub 5]Si[sub 2]Ge[sub 2] and Tb[sub 5]Si[sub 2.2]Ge[sub 1.8] were obtained in the photon energy range of 1.5–5.5 eV. Several peaks were observed for these crystals in the measured spectrum range. Similar features were observed in the RD spectra for the b–c planes of Gd[sub 5]Si[sub 2]Ge[sub 2] and Tb[sub 5]Si[sub 2.2]Ge[sub 1.8], while different features were observed for the a–b plane and b–c plane of Gd[sub 5]Si[sub 2]Ge[sub 2]. The RD spectra for the crystals arise not only from the surface anisotropy but also from the bulk anisotropy due to the monoclinic structure of the bulk crystal. © 2004 American Institute of Physics.


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