Investigations of V-shaped defects and photoluminescence of thin GaN-rich GaNP layers grown on a GaN epilayer by metalorganic chemical vapor deposition

Li, H.D.; Tsukihara, M.; Naoi, Y.; Lee, Y.B.; Sakai, S.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1886
Academic Journal
Structural defects in high-temperature GaN-rich GaNP layers grown on a thick GaN epilayer by metalorganic chemical vapor deposition were investigated by means of transmission electron microscopy and atomic force microscopy. It is found that there are inverted hexagonal pyramid V-shaped defects in the GaNP layers with a higher phosphorus (P) composition. These defects are generally related to threading dislocations propagating from the GaN layer beneath. Consequently, the dislocation density in the GaNP layers is dramatically decreased to 5–8×10[sup 7] cm[sup -2]. Photonluminescence (PL) measurements show that the PL wavelength of GaNP redshifts and the integrated emission intensity significantly increases, with respect to that from GaN layers grown under identical conditions. The emission enhancement is attributed to lowering of the dislocation density and enlarging the escape cone of photons by the rough surface, which result from the V-shaped defects formed in the GaNP layer. © 2004 American Institute of Physics.


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