Contacts to p-type ZnMgO

Kim, Suku; Kang, B.S.; Ren, F.; Heo, Y.W.; Ip, K.; Norton, D.P.; Pearton, S.J.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1904
Academic Journal
Ohmic and Schottky contacts to p-type Zn[sub 0.9]Mg[sub 0.1]O are reported. The lowest specific contact resistivity of 3×10[sup -3] Ω cm[sup 2] was obtained for Ti/Au annealed at 600 °C for 30 s. Ni/Au was less thermally stable and showed severe degradation of contact morphology at this annealing temperature. Both Pt and Ti with Au overlayers showed rectifying characteristics on p-ZnMgO, with barrier heights of ∼0.55–0.56 eV and ideality factors of ∼1.9. Comparison of these results with the same metals on n-type ZnO indicates that high surface state densities play a significant role in determining the effective barrier height. © 2004 American Institute of Physics.


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