Densification and improved electrical properties of pulse-deposited films via in situ modulated temperature annealing

Conley Jr., J.F.; Ono, Y.; Tweet, D.J.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1913
Academic Journal
We find that the modulated temperature annealing of pulse-deposited high dielectric constant films, in which brief in situ elevated temperature anneals are performed after every deposition cycle, results in film densification, a reduction in interfacial layer thickness, and a strong improvement in electrical properties. The densification and improvement of electrical properties could not be achieved solely by postdeposition annealing at temperatures up to 850 °C. © 2004 American Institute of Physics.


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