TITLE

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

AUTHOR(S)
Wang, Z.M.; Holmes, K.; Mazur, Yu. I.; Salamo, G.J.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1931
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanostructure evolution during the growth of multilayers of In[sub 0.5]Ga[sub 0.5]As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In[sub 0.5]Ga[sub 0.5]As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices. © 2004 American Institute of Physics.
ACCESSION #
12512675

 

Related Articles

  • The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy. Tonkikh, A. A.; Cirlin, G. E.; Polyakov, N. K.; Samsonenko, Yu. B.; Ustinov, V. M.; Zakharov, N. D.; Werner, P.; Talalaev, V. G.; Novikov, B. V. // Semiconductors;May2006, Vol. 40 Issue 5, p587 

    The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350°C) and with various degrees of misorientation of the surface are studied. It is shown that low-temperature growth is accompanied by the formation of...

  • InAs quantum dots on [formula]. Suzuki, T.; Temko, Y.; Xu, M.C.; Jacobi, K. // Journal of Applied Physics;12/1/2004, Vol. 96 Issue 11, p6398 

    InAs quantum dots (QD5) were prepared by molecular beam epitaxy on GaAs(112)B substrates. Shape and size distribution of the QDs were investigated using in situ scanning tunneling microscopy as function ot preparation temperature between 435 and 550 C. The wetting layer is not flat hut undulated...

  • Effect of arsenic species on the formation of (Ga)InAs nanostructures after partial capping and regrowth. Suraprapapich, S.; Panyakeow, S.; Tu, C. W. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p183112 

    Surface morphologies of self-assembled (Ga)InAs nanostructures grown by partial-capping-and-regrowth technique using gas-source molecular beam epitaxy (GSMBE) and solid-source molecular beam epitaxy (SSMBE) are compared. With SSMBE under an As4 ambient, as-grown quantum dots (QDs) change to a...

  • Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate. Bennour, M.; Saidi, F.; Bouzaïene, L.; Sfaxi, L.; Maaref, H. // Journal of Applied Physics;Jan2012, Vol. 111 Issue 2, p024310 

    We present a study of the optical properties of InAs self-assembled nanostructures grown by molecular beam epitaxy on GaAs(11N)A substrates (N = 3-5). Photoluminescence (PL) measurements revealed good optical properties of InAs quantum dots (QDs) grown on GaAs(115)A compared to those grown on...

  • Change of InAs/GaAs quantum dot shape and composition during capping. Eisele, H.; Lenz, A.; Heitz, R.; Timm, R.; Dähne, M.; Temko, Y.; Suzuki, T.; Jacobi, K. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 12, p124301 

    Using plan-view and cross-sectional scanning tunneling microscopy, the shape and composition of InAs/GaAs quantum dots are investigated before and after capping by GaAs. During capping, the original pyramidally shaped quantum dots become truncated, resulting in a flat (001) top facet and steeper...

  • Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer. Zuoming Zhao; Zhibiao Hao; Yadavalli, Kameshwar; Wang, Kang L.; Jacob, Ajey P. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p083111 

    InAs quantum dots (QDs) were grown on patterned Si substrates with a thin GaAs buffer using SiO2 as a mask by molecular beam epitaxy. GaAs was firstly selectively grown on the exposed Si surface with feature size around 250 nm. The InAs QDs were selectively grown on top of the GaAs. Low...

  • In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties. Urbanczyk, A.; Hamhuis, G. J.; Nötzel, R. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p014312 

    We report growth of crystalline In islands on GaAs (100) by molecular beam epitaxy at low temperatures. The islands have a pyramidlike shape with well defined facets and epitaxial relation with the substrate. They are of nanoscale dimensions with high density. Above a certain substrate...

  • Metamorphic quantum dots: Quite different nanostructures. Seravalli, L.; Frigeri, P.; Nasi, L.; Trevisi, G.; Bocchi, C. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p064324 

    In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that...

  • Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs. Akiyama, Y.; Sakaki, H. // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p183108 

    Dense and highly ordered arrays of self-assembled InGaAs quantum dots are formed by molecular beam epitaxy along multiatomic steps on vicinal (111)B GaAs. This unique structure has been synthesized by depositing a nominally 3-nm-thick In0.3Ga0.7As layer onto a periodically corrugated surface...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics