TITLE

Intraband absorption for InAs/GaAs quantum dot infrared photodetectors

AUTHOR(S)
Zhang, J.-Z.; Galbraith, I.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1934
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using the envelope function theory, intraband absorption is calculated for InAs/GaAs pyramidal quantum dots. The effects of the quantum dot geometry, such as the dot shape and the wetting layer (WL) thickness, and the coupling between the WL and bound states on the intraband transitions are systematically studied. Strong in-plane polarized absorption from the first excited state occurs in the low mid-infrared region, while stronger broadband z-polarized absorption features are located at higher frequencies. This polarization dependence is in agreement with the experiment [Appl. Phys. Lett. 82, 630 (2003)] and is due to the dot geometry. The WL can induce both in-plane and z-polarized absorption. Absorption of in-plane polarized light from the ground state to the WL and continuum states is found to be negligible. Thus, for strong normal-incidence photodetection, absorption from the first excited state should be exploited. © 2004 American Institute of Physics.
ACCESSION #
12512674

 

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