TITLE

Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter

AUTHOR(S)
Semet, V.; Vu Thien Binh; Zhang, J.P.; Yang, J.; Khan, M. Asif; Tsu, R.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1937
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured the field electron emission (FE) from a surface covered with two ultrathin layers of semiconductor, 4 nm GaN on 2 nm Al[sub 0.5]Ga[sub 0.5]N. The threshold field was 50 V/μm, with stable FE current densities up to 3×10[sup -2] A/cm[sup 2]. We have also measured the FE dependence with field and temperature and determine then an effective surface tunneling barrier ≤0.5 eV, coexisting with an effective thermal activation energy of ∼0.85 eV. To interpret these experimental results, we propose a dual-barrier model, related to the nanostructured layers, with a serial two-step mechanism for the electron emission, taking into account the space charge formation in the quantum well structure at the surface. © 2004 American Institute of Physics.
ACCESSION #
12512673

 

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