TITLE

High-performance carbon nanotube transistors on SrTiO[sub 3]/Si substrates

AUTHOR(S)
Kim, B.M.; Brintlinger, T.; Cobas, E.; Fuhrer, M.S.; Haimei Zheng, M.S.; Yu, Z.; Droopad, R.; Ramdani, J.; Eisenbeiser, K.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1946
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-κ dielectric SrTiO[sub 3]/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO[sub 3] as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 μS/μm. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube–electrode interface due to the high-κ SrTiO[sub 3] decreases or eliminates the nanotube-electrode Schottky barrier. © 2004 American Institute of Physics.
ACCESSION #
12512670

 

Related Articles

  • Novel high mobility Ga0.51In0.49P/GaAs modulation-doped field-effect transistor structures grown using a gas source molecular beam epitaxy. Jiang, Z. P.; Fischer, P. B.; Chou, S. Y.; Nathan, M. I. // Journal of Applied Physics;5/1/1992, Vol. 71 Issue 9, p4632 

    Presents a study which investigated the standard gallium [sub0.51]In[0.49]P/GaAs modulation-doped field-effect transistor structure. Description of the metalorganic chemical vapor deposition and chloride vapor phase epitaxy; Fabrication of modulation-doped field-effect transistors; Measurements...

  • Imaging suspended carbon nanotubes in field-effect transistors configured with microfabricated slits for transmission electron microscopy. Kim, Taekyung; Zuo, Jian-Min; Olson, Eric A.; Petrov, Ivan // Applied Physics Letters;10/24/2005, Vol. 87 Issue 17, p173108 

    Field-effect transistors with carbon nanotubes (CNTs) suspended across etched slits and fabricated by chemical vapor deposition have been characterized by electrical measurements and transmission electron microscopy. Two devices are examined here: One is semiconducting from two single-wall CNTs,...

  • In situ observations of carbon nanotube formation using environmental transmission electron microscopy. Sharma, Renu; Iqbal, Zafar // Applied Physics Letters;2/9/2004, Vol. 84 Issue 6, p990 

    Environmental transmission electron microscope is used for in situ observations of the growth mechanism and reaction conditions of carbon nanotubes. Chemical vapor deposition was performed by flowing propylene or acetylene gas (precursor) over Ni or Co catalyst heated to 450 °C and 700 °C....

  • Structure determinations of double-wall carbon nanotubes grown by catalytic chemical vapor deposition. Gao, M.; Zuo, J. M.; Zhang, R.; Nagahara, L. A. // Journal of Materials Science;Jul2006, Vol. 41 Issue 14, p4382 

    We report an application of nanoarea electron diffraction for structure determination of double-wall carbon nanotubes (DWNT) grown by catalytic chemical vapor deposition. The structures of 30 tubes were determined from experimental diffraction patterns. Among these tubes, the inner and outer...

  • Burn-in effect on GaInP heterojunction bipolar transistors. Mimila-Arroyo, J. // Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3204 

    The burn-in effect in metalorganic chemical vapor deposition grown GaInP/GaAs heterojunction bipolar transistors is explained as due to the passivation of hydrogen-related recombination centers in the emitter. Results show that the diffusion base current contribution is dominated by the...

  • Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors. Lee, W.; Ryou, J.-H.; Yoo, D.; Limb, J.; Dupuis, R. D.; Hanser, D.; Preble, E.; Williams, N. M.; Evans, K. // Applied Physics Letters;2/26/2007, Vol. 90 Issue 9, p093509 

    The authors have studied the effects of Fe doping at the interface between GaN epitaxial layers for heterostructure field-effect transistors grown by metal-organic chemical vapor deposition and the corresponding impact on the device characteristics. The epitaxial structures were grown with...

  • Mechanical properties of chemical vapor deposition-grown multiwalled carbon nanotubes. Gaillard, Jay; Skove, Malcolm; Rao, Apparao M. // Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p233109 

    The bending modulus (Young’s modulus) of several chemical vapor deposition-grown multiwalled nanotubes (MWNTs) have been measured using a vibrating reed technique. Three different precursors were used to produce MWNTs with differing densities of defects in the tube walls. Individual MWNTs...

  • Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices. Seidel, Robert; Liebau, Maik; Unger, Eugen; Graham, Andrew P.; Duesberg, Georg S.; Kreupl, Franz; Hoenlein, Wolfgang; Pompe, Wolfgang // AIP Conference Proceedings;2004, Vol. 723 Issue 1, p508 

    New results on the planar growth of single-walled carbon nanotubes (SWCNTs) by catalytic chemical vapor deposition (CVD) at low temperatures will be reported. Optimizing catalyst, catalyst support, and growth parameters yields SWCNTs at temperatures as low as 600 °C. Growth at such low...

  • The Synthesis of Carbon Nanotubes from Metal Nanoparticles. Edgar, K.; Hendy, S. C.; Spencer, J. L.; Tilley, R. D. // AIP Conference Proceedings;7/23/2009, Vol. 1151 Issue 1, p145 

    Iron, nickel and cobalt nanoparticles on the order of 2–5 nm in diameter have been synthesised and deposited on oxidised silicon wafers. These wafers have then been subjected to plasma enhanced chemical vapour deposition using ethanol as a carbon source gas. Preliminary results show the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics