High-performance carbon nanotube transistors on SrTiO[sub 3]/Si substrates

Kim, B.M.; Brintlinger, T.; Cobas, E.; Fuhrer, M.S.; Haimei Zheng, M.S.; Yu, Z.; Droopad, R.; Ramdani, J.; Eisenbeiser, K.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1946
Academic Journal
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-κ dielectric SrTiO[sub 3]/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO[sub 3] as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 μS/μm. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube–electrode interface due to the high-κ SrTiO[sub 3] decreases or eliminates the nanotube-electrode Schottky barrier. © 2004 American Institute of Physics.


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