Quantum-well-base heterojunction bipolar light-emitting transistor

Feng, M.; Holonyak Jr., N.; Chan, R.
March 2004
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1952
Academic Journal
This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In[sub 1-x]Ga[sub x]As (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers (“traps”) are imbedded in the 300 Å GaAs base layer, thus improving (as a “collector” and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated. © 2004 American Institute of Physics.


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