TITLE

Quantum-well-base heterojunction bipolar light-emitting transistor

AUTHOR(S)
Feng, M.; Holonyak Jr., N.; Chan, R.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1952
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In[sub 1-x]Ga[sub x]As (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers (“traps”) are imbedded in the 300 Å GaAs base layer, thus improving (as a “collector” and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated. © 2004 American Institute of Physics.
ACCESSION #
12512668

 

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