Optically active erbium–oxygen complexes in GaAs

Coutinho, J.; Jones, R.; Shaw, M. J.; Briddon, P. R.; Öberg, S.
March 2004
Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1683
Academic Journal
Density functional modeling of Er and Er–O complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole capture. Among the defects studied, the Er[sub Ga]O[sub As] and Er[sub Ga](O[sub As])[sub 2] models have the symmetry and carrier trap location close to the defect responsible for the strong 1.54 μm photoluminescence band in Er, O codoped GaAs. © 2004 American Institute of Physics.


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