Reduction of positional errors in a four-point probe resistance measurement

Woriedge, D. C.
March 2004
Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1695
Academic Journal
A method for reducing resistance errors due to inaccuracy in the positions of the probes in a collinear four-point probe resistance measurement of a thin film is presented. By using a linear combination of two measurements which differ by interchange of the I- and V- leads, positional errors can be eliminated to first order. Experimental data measured using microprobes show a substantial reduction in absolute error from 3.4% down to 0.01%–0.1%, and an improvement in precision by a factor of 2–4. The application of this technique to the current-in-plane tunneling method to measure electrical properties of unpatterned magnetic tunnel junction wafers is discussed. © 2004 American Institute of Physics.


Related Articles

  • The conical shape filament growth model in unipolar resistance switching of TiO2 thin film. Kim, Kyung Min; Hwang, Cheol Seong // Applied Physics Letters;3/23/2009, Vol. 94 Issue 12, p122109 

    This study examined the relationship between the conducting filament resistance and reset voltage during the resistance switching of TiO2 thin films assuming a filament with a conical shape. There was a critical resistance (∼20 Ω) of the set state above and below which the filament...

  • Resistive current state of a wide superconducting film. Zolochevskii, I. V. // Low Temperature Physics;Dec2011, Vol. 37 Issue 12, p979 

    The current-voltage characteristics (CVCs) of vortex superconducting films are investigated in a wide temperature range. It is shown for the first time that the experimental CVCs and their parameters are described well enough by asymptotic formulas within the theory of the vortex resistive state...

  • Breakdown and defect generation in ultrathin gate oxide. Depas, M.; Vermeire, B. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p382 

    Examines the dielectric reliability of thermally grown ultrathin 3 nm SiO2 layers in poly-Si/SiO2/Si structures. Direct tunneling current instability; Oxide reliability; Defect generation mechanism; Increase of the tunnel current during a constant bias stressing.

  • Radio frequency performance of superconducting thin films in high magnetic fields. Hubner, H.; Valenzuela, A.A. // Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3491 

    Describes measurements of the specific resistivity of epitaxially grown YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films in high magnetic fields. Extrapolation of the microwave measurements of the films to the frequency of interest; Achievement of a 70-fold reduction of the specific resistance;...

  • Production, electrical conductivity, and gas-sensing properties of thin nickel ferrite films. Busurin, S.; Tsygankov, P.; Busurina, M.; Kovalev, I.; Boyarchenko, O.; Sachkova, N.; Sychev, A. // Doklady Physical Chemistry;Jun2012, Vol. 444 Issue 2, p83 

    The article presents a study of the electrical conductivity of films applied to silicon or glass substrates and the impact of gas concentration on the behavior of electrical resistance of a thin ferrite film. It analyzes the microstructure, morphology and relief of the surface using scanning and...

  • Complex impedance measurements of capacitor structures on silicon with copper phthalocyanine dielectric. Nowroozi-Esfahani, Rasoul; Maclay, G. Jordan // Journal of Applied Physics;4/1/1990, Vol. 67 Issue 7, p3409 

    Presents a study which reported the electrical properties of a copper phthalocyanine film when subjected to alternating current (ac) signals. Basic features of the capacitance-voltage characteristics of the device; Polarization that results from the application of an external ac field;...

  • Enhanced photoemission of Ag-O-Cs composite thin films with an internal electric field. Zhang, Q. F.; Liu, W. M.; Xue, Z. Q.; Wu, J. L. // Journal of Applied Physics;2/15/2001, Vol. 89 Issue 4, p2227 

    Ag-O-Cs thin films with internal field-assisted structure were fabricated, and enhanced photoemission was observed when the internal electric field was applied to the thin films. The increase of photoelectronic quantum yield, corresponding to the applied 30 V bias, was about 15.7%, while the...

  • Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals. Watanabe, Koji; Tatsumi, Toru; Togo, Mitsuhiro; Mogami, Tohru // Journal of Applied Physics;11/1/2001, Vol. 90 Issue 9, p4701 

    We studied nitrogen incorporation in ultrathin oxynitride films by using oxygen and nitrogen radicals, and investigated the dependence of the electrical properties on the nitrogen profile. We found that the nitrogen position in the films could be controlled by using different processing...

  • Correlation between distribution of outgrowths and microwave surface resistance for.... Tian, Y.J.; Li, L. // Applied Physics Letters;10/31/1994, Vol. 65 Issue 18, p2356 

    Examines the correlation between outgrowth distribution and microwave surface resistance for yttrium barium copper oxide (YBCO) superconducting thin films. Use of outgrowth loss mechanism to depict thin film intrinsic loss; Application of a model for film optimization guidance; Effects of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics