TITLE

Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen

AUTHOR(S)
Kim, Suku; Kang, B. S.; Ren, F.; Ip, K.; Heo, Y. W.; Norton, D. P.; Pearton, S. J.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1698
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H[sub 2] is introduced into a N[sub 2] ambient at 25 °C. The rectifying current–voltage (I–V) characteristic shows a nonreversible collapse to Ohmic behavior when as little as 50 ppm of H[sub 2] is present in the N[sub 2] ambient. At higher temperatures, the recovery is thermally activated with an activation energy of ∼0.25 eV. This suggests that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes. © 2004 American Institute of Physics.
ACCESSION #
12405717

 

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