Bistable defect in mega-electron-volt proton implanted 4H silicon carbide

Martin, D. M.; Nielsen, H. Kortegaard; Lév&etilde;que, P.; Hallén, A.; Alfieri, G.; Svensson, B. G.
March 2004
Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1704
Academic Journal
Epitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1×10[sup 12] cm[sup -2] creates an estimated initial concentration of intrinsic point defects of about 10[sup 14] cm[sup -3] of which about 10% remain after the implantation and gives rise to deep states in the upper part of the band gap. Here, we investigate the samples prior to high-temperature annealing and a very complex spectrum is revealed. In particular, a bistable defect M is discovered having two DLTS peaks, M[sub 1] and M[sub 3] at E[sub C]-0.42 and around E[sub C]-0.75 eV, respectively, in one configuration and one peak, M[sub 2] at E[sub C]-0.70 eV in the other configuration. The charge dependent thermal activation energies for the transformation between the bistable defect peaks are 0.90 and 1.40 eV. © 2004 American Institute of Physics.


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