Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN

Kim, Han-Ki; Tae-Yeon Seong; Adesida, Ilesanmi; Tang, Chak Wah; Kei May Lau
March 2004
Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1710
Academic Journal
We report on a Pt/Pd/Au metallization scheme for producing low-resistance ohmic contacts to moderately doped p-AlGaN:Mg (1.5×10[sup 17] cm[sup -3]). Annealed Pt/Pd/Au contact exhibits linear current–voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Pd/Au contact exhibits a specific contact resistivity of 3.1×10[sup -4] Ω cm[sup 2] when annealed at 600 °C for 1 min in a flowing N[sub 2] atmosphere. Using Auger electron spectroscopy and x-ray photoelectron spectroscopy, a preliminary explanation for ohmic contact formation is described. © 2004 American Institute of Physics.


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