Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

Wen, H.; Wang, Z. M.; Salamo, G. J.
March 2004
Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1756
Academic Journal
Generally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [-233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation. © 2004 American Institute of Physics.


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