Frequency dependent characterization of transport properties in carbon nanotube transistors

Appenzeller, J.; Frank, D. J.
March 2004
Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1771
Academic Journal
We have experimentally verified that carbon nanotube field-effect transistors do not show any signal degradation when operated at frequencies up to 580 MHz, the limit of our current measurement setup. In order to characterize the high-frequency response of individual single wall carbon nanotubes in a three-terminal transistor configuration, a non-standard measurement approach was employed. By making use of the nonlinearity of nanotube transistor transfer characteristics, the response of a tube to a combined ac/dc signal was studied. This technique enables easy access to the high-frequency performance of nanoscale devices in general even for the rather low current levels typically observed for individual carbon nanotube field-effect transistors. © 2004 American Institute of Physics.


Related Articles

  • Giant random telegraph signals in the carbon nanotubes as a single defect probe. Fei Liu; Mingqiang Bao; Hyung-Jun Kim; Wang, Kang L.; Chao Li; Xiaolei Liu; Chongwu Zhou // Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p163102 

    Giant random telegraph signals (RTSs) are observed in p-type semiconducting single-wall carbon nanotube (SWNT) field-effect transistors (FETs). The RTSs are attributed to the trapping and detrapping of the two defects inside SiO2 or in the interface between SWNT and SiO2. The amplitude of the...

  • Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes. Feng, Y.; Lee, K.; Farhat, H.; Kong, J. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p104505-1 

    This work examines the enhancement of current on/off ratio in field effect transistor devices with bundled single-walled carbon nanotubes (CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the...

  • Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions. Uchida, Ken; Saitoh, Masumi // Applied Physics Letters;11/12/2007, Vol. 91 Issue 20, p203520 

    The effect of axial strain on the performance of carbon-nanotube field-effect transistors with doped junctions is studied. When the diameter of carbon nanotubes (CNTs) is less than 1.5 nm, the decrease of the off-current by axial strain occurs together with the decrease of on-current. However,...

  • High Performance Double Edge Triggered D Flip-Flop Based Shift Registers Using CNTFET. Ravi, T.; Kannan, V. // IUP Journal of Electrical & Electronics Engineering;Jan2014, Vol. 7 Issue 1, p19 

    In this paper, a high performance Double Edge Triggered D Flip Flop-based Serial in Serial Out (SISO), Serial In Parallel Out (SIPO), Parallel In Serial Out (PISO) and Parallel In Parallel Out (PIPO) shift registers are designed using Carbon NanoTube Field Effect Transistor (CNTFET). The CNTFET...

  • Gate Control Coefficient Effect on CNFET Characteristic. Sanudin, Rahmat; Ma'Radzi, Ahmad Alabqari; Nayan, Nafarizal // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p282 

    The development of carbon nanotube field-effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control...

  • Ultrathin gate-contacts for metal-semiconductor field-effect transistor devices: An alternative approach in transparent electronics. Frenzel, H.; Lajn, A.; Von Wenckstern, H.; Grundmann, M. // Journal of Applied Physics;Jun2010, Vol. 107 Issue 11, p114515 

    Transparent metal-insulator-semiconductor field-effect transistors (TMISFETs) are commonly designated as one keystone of transparent circuitry. TMISFETs were demonstrated using carbon nanotubes, organics, or oxides. The optimization of their gate-insulator as well as the field-effect mobility...

  • Dependence of carbon nanotube field effect transistors performance on doping level of channel at different diameters: On/off current ratio. Shirazi, Shaahin G.; Mirzakuchaki, Sattar // Applied Physics Letters;12/26/2011, Vol. 99 Issue 26, p263104 

    Choosing a suitable doping level of channel relevant to channel diameter is considered for determining the carbon nanotube field effect transistors' performance which seem to be the best substitute of current transistor technology. For low diameter values of channel, the ratio of on/off current...

  • A NOVEL FULL ADDER CELL BASED ON CARBON NANOTUBE FIELD EFFECT TRANSISTORS. Ghorbani, Ali; Sarkhosh, Mehdi; Fayyazi, Elnaz; Mahmoudi, Neda; Keshavarzian, Peiman // International Journal of VLSI Design & Communication Systems;Jun2012, Vol. 3 Issue 3, p33 

    Presenting a novel full adder cell will be increases all the arithmetic logic unit performance. In this paper, We present two new full adder cell designs using carbon nanotube field effect transistors (CNTFETs). In the first design we have 42 transistors and 5 pull-up resistance so that we have...

  • Multichannel carbon nanotube field-effect transistors with compound channel layer. Changxin Chen; Wei Zhang; Yafei Zhang // Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192110 

    A multichannel carbon nanotube field-effect transistor (MC-CNTFET) with compound channel layer has been built. In this MC-CNTFET, a dispersedly directed array of long single-walled carbon nanotubes (SWCNTs) is used as primary channel layer and a randomly aligned monolayer network of short SWCNTs...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics