λ∼4–5.3 μm intersubband emission from InGaAs–AlAsSb quantum cascade structures

Revin, D.G.; Wilson, L.R.; Zibik, E.A.; Green, R.P.; Cockburn, J.W.; Steer, M.J.; Airey, R.J.; Hopkinson, M.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1447
Academic Journal
The In[sub 0.53]Ga[sub 0.47]As–AlAs[sub 0.56]Sb[sub 0.44] materials system, lattice matched to InP, is an attractive candidate for short wavelength quantum cascade lasers due to the very large conduction band discontinuity (∼1.6 eV) and compatibility with well established quantum cascade laser waveguide design and fabrication technology. In this letter we report the operation of In[sub 0.53]Ga[sub 0.47]As–AlAs[sub 0.56]Sb[sub 0.44] quantum cascade structures emitting in the wavelength range λ∼4–5.3 μm. Clear intersubband electroluminescence peaks are observed close to the design wavelengths, with full widths at half maximum in the range of ∼30–40 meV. © 2004 American Institute of Physics.


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