Electroluminescence of single silicon nanocrystals

Valenta, Jan; Lalic, Nenad; Linnros, Jan
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1459
Academic Journal
We report on measurements of room-temperature electroluminescence from single silicon nanocrystals. The electrically driven emission reveals typical characteristics of single-nanocrystal luminescence: the peak wavelength variations, narrowing of spectral bands, a high degree of linear polarization, and intensity fluctuations (blinking) observed on a scale of minutes. From the count rate statistics of individual nanocrystals, we conclude that the yield of radiative emission is as high as 19%. These findings may open a route to highly efficient all-silicon light emitters. © 2004 American Institute of Physics.


Related Articles

  • Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements. Gongalsky, M. B.; Konstantinova, E. A.; Osminkina, L. A.; Timoshenko, V. Yu. // Semiconductors;Jan2010, Vol. 44 Issue 1, p89 

    Luminescence of gas-phase singlet oxygen optically sensitized by microporous silicon at room temperature is detected for the first time. At the same time, a photoinduced increase in the photoluminescence intensity of defects at the sample surface in oxygen atmosphere is observed. It is shown...

  • Correlation between surface composition and luminescence of nanocrystalline silicon particles dispersed in pure water. Hiruoka, Masaki; Sato, Keisuke; Hirakuri, Kenji // Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p024308 

    The stability of the luminescene of nanocrystalline silicon (nc-Si) particles passivated with a number of different elements, including hydrogen, carbon, and oxygen, has been investigated in pure water. Each sample emitted red light with a peak wavelength in the range of 740–800 nm. The...

  • The effect of annealing environment on the luminescence of silicon nanocrystals in silica. Wilkinson, A. R.; Elliman, R. G. // Journal of Applied Physics;10/1/2004, Vol. 96 Issue 7, p4018 

    The effect of annealing environment on the photoluminescence from silicon nanocrystals synthesized in fused silica by ion implantation and thermal annealing is examined as a function of annealing temperature and time. The choice of annealing environment (Ar, N2, or 5% H2 in N2) is found to...

  • Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix. Liang-Yih Chen; Wen-Hua Chen; Franklin Chau-Nan Hong // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p193506 

    Visible electroluminescence from silicon nanocrystals (Si-NCs) embedded in amorphous silicon nitride (a-SiNx) films has been observed. The Si-NC/a-SiNx films were deposited by evaporating silicon from electron gun into the inductively coupled plasma of nitrogen. The density of Si-NCs in the...

  • Field-emission properties of quasi-one-dimensional NbOx crystals. Žumer, Marko; Nemanič, Vincenc; Zajec, Bojan; Remškar, Maja; Mrzel, Aleš; Milhailovic, Dragan // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3615 

    The field-emission (FE) properties of quasi-one-dimensional NbOx crystals are reported for the single needle geometry. Relatively stable FE currents in excess of 1 μA were measured after a careful conditioning in vacuum of 10-7 mbar. In all our experiments, the FE current originating from a...

  • Dislocation-related photoluminescence from processed Si. Misiuk, Andrzej; Zhuravlev, Konstantin S.; Jung, Wojciech; Prujszczyk, Marek; Steinman, Edward A. // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p243 

    Dislocation-related photoluminescence (PL) from oxygen containing Czochralski silicon (Cz-Si) processed at up to 1,400 K (HT) under atmospheric and enhanced Ar pressures (HP, up to 1.2 GPa) has been investigated. Appropriate processing of Cz-Si results in a creation of oxygen precipitates and of...

  • Electroluminescence as internal light source for measurement of the photonic strength of random porous GaP. van Driel, A.F.; Vanmaekelbergh, D.; Kelly, J.J. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3852 

    During porous etching of GaP, electroluminescence ranging from the ultraviolet to the near-infrared is generated at the interface of the porous and the nonporous layer. This is used to measure the wavelength-dependent transmission of light through porous layers in a wide thickness range. Two...

  • Infrared Quenching of Electroluminescence in ZnS:Mn Thin-Film Emitters. Gurin, N. T.; Ryabov, D. V. // Technical Physics Letters;May2004, Vol. 30 Issue 5, p392 

    IR irradiation of electroluminescent emitters based on thin ZnS:Mn films in the pause between excitation voltage pulses produces quenching of the luminescence and leads to a decrease in the emission intensity within the wavelength interval 530–540 nm and an increase within 640–680...

  • Synthesis of Benzothiadiazole-Based Liquid Crystalline Polyacrylates for Polarized Light Emitting Diodes. Yung-Hsin Yao; Liang-Rern Kung; Chain-Shu Hsu // Journal of Polymer Research;Oct2006, Vol. 13 Issue 4, p277 

    Two benzothiadiazole-based liquid crystalline polyacrylates were synthesized. These polymers revealed a nematic liquid crystal phase and exhibited photoluminescence as well as polarized electroluminescence when incorporated into light-emitting diode applications. The polymers showed dichroic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics