TITLE

Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon

AUTHOR(S)
Baker, C.C.; Heikenfeld, J.; Yu, Z.; Steckl, A.J.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1462
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical amplification and electroluminescence at 1.5 μm is reported in Er-doped Zn[sub 2]Si[sub 0.5]Ge[sub 0.5]O[sub 4] (ZSG:Er) on silicon. ZSG:Er films were deposited by rf sputtering from a composite target in Ar/O[sub 2] mixtures. Channel waveguides were fabricated by plasma etching with Cl/Ar. The refractive index of ZSG:Er was found to be 1.75 at 1.54 μm. Signal enhancement greater than 13 dB and an internal gain of ∼2 dB have been achieved by optically pumping a 4.7 cm ZSG:Er amplifier. Electroluminescence at 1.5 μm was achieved using an ac device structure with a ZSG:Er central layer and upper and lower dielectric layers. © 2004 American Institute of Physics.
ACCESSION #
12360980

 

Related Articles

  • Ellipsometry analysis of MgxZni.xO films on silicon substrates. Yuanxun Yu; Jie Lian; Wenli Guan; Xiaohong Yu // Applied Mechanics & Materials;2014, Issue 668-669, p95 

    MgxZn1-xO films with hexagonal structure are prepared by radio frequency (rf) magnetron sputtering on Si substrate. The refractive indices and absorption coefficients of these films in the wavelength range from 300 to 800nm are determined by using ellipsometry at room temperature. The results...

  • Optical Properties of Amorphous Silicon-Carbon Alloys (a-SiC) Deposited by RF Co-Sputtering. El Khalfi, A.; Ech-chamikh, E.; Ijdiyaou, Y.; Azizan, M.; Essafti, A. // Arabian Journal for Science & Engineering (Springer Science & Bu;Jul2014, Vol. 39 Issue 7, p5771 

    Amorphous silicon-carbon alloy (a-SiC) thin films have been deposited by radio frequency (RF) sputter deposition. These films were obtained, from a composite target consisting of silicon fragments regularly distributed on the surface of a pure graphite disc, for different values of silicon...

  • Formation of a silicon-carbide layer during CF4/H2 dry etching of Si. Coyle, George J.; Oehrlein, Gottlieb S. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p604 

    Silicon specimens which had been reactive ion etched in CF4/x% H2 (0≤x≤40) have been characterized by x-ray photoelectron emission spectroscopy. Angular rotation was used to study films deposited by the plasma process onto the Si surface. In agreement with previous studies it is...

  • Preparation and electrochromic properties of rf-sputtered molybdenum oxide films. Miyata, N.; Akiyoshi, S. // Journal of Applied Physics;8/15/1985, Vol. 58 Issue 4, p1651 

    Investigates the properties of radio-frequency (rf)-sputtered molybdenum oxide films for electrochromic display devices. Preparation of the molybdenum oxide films; Procedures of sputtering; Relation between electrical resistivity and thickness of oxide films; Information on the optical band gap...

  • Dispersion Properties of (YGA)O Thin Films. Bordun, O.; Kukharskyy, I.; Medvid, I. // Journal of Applied Spectroscopy;Mar2016, Vol. 83 Issue 1, p141 

    We have studied the refractive index dispersion in (YGa)O thin films obtained by high-frequency ion plasma sputtering. We show that the films are formed with mixed orientation, and the maxima of the diffraction patterns correspond to the monoclinic crystal structure of β-GaO. We have...

  • Deposition and physical characterization of thin films of lithium niobate on silicon substrates. Baumann, Robert C.; Rost, Timothy A.; Rabson, Thomas A. // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2989 

    Presents a study which analyzed the structural and chemical properties of LiNbO[sub3] thin films deposited by reactive radio frequency sputtering on silicon. Applications of the thin film; Experimental methods used; Results and discussion.

  • Reactive ion etching of SiGe alloys using CF2Cl2. Zhang, Ying; Oehrlein, Gottlieb S.; de Frésart, Edouard; Corbett, James W. // Journal of Applied Physics;2/15/1992, Vol. 71 Issue 4, p1936 

    Studies the dry etching characteristics of strained silicon germanium (SiGe) thin films using carbon compounds. Importance of the reactive ion etching of SiGe alloys; Details on the experiment; Discussion on the results of the study.

  • Experimental realization of the porous silicon optical multilayers based on the 1-s sequence. Estevez, J. O.; Arriaga, J.; Méndez-Blas, A.; Robles-Cháirez, M. G.; Contreras-Solorio, D. A. // Journal of Applied Physics;Jan2012, Vol. 111 Issue 1, p013103 

    We report experimental results of the reflectance spectra of deterministic aperiodic multilayer structures fabricated with porous silicon. The refractive index of the layers forming the structures follows the values generated by the self-similar sequence called 'the 1s-counting sequence.' We...

  • Crystallinity of ZnS:Tb,F thin films and characteristics of green-color thin-film electroluminescent devices prepared by rf-magnetron sputtering. Hsu, Chin Tsar; Lin, Ying Jen; Su, Yan Kuin; Yokoyama, Meiso // Journal of Applied Physics;11/15/1992, Vol. 72 Issue 10, p4655 

    Presents information on a study which examined thin films deposited by radio frequency-magnetron sputtering in order to fabricate high-brightness thin-film electroluminescent devices. Insight on alternating current thin-film electroluminescent devices; Methodology of the study; Results and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics