Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon

Baker, C.C.; Heikenfeld, J.; Yu, Z.; Steckl, A.J.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1462
Academic Journal
Optical amplification and electroluminescence at 1.5 μm is reported in Er-doped Zn[sub 2]Si[sub 0.5]Ge[sub 0.5]O[sub 4] (ZSG:Er) on silicon. ZSG:Er films were deposited by rf sputtering from a composite target in Ar/O[sub 2] mixtures. Channel waveguides were fabricated by plasma etching with Cl/Ar. The refractive index of ZSG:Er was found to be 1.75 at 1.54 μm. Signal enhancement greater than 13 dB and an internal gain of ∼2 dB have been achieved by optically pumping a 4.7 cm ZSG:Er amplifier. Electroluminescence at 1.5 μm was achieved using an ac device structure with a ZSG:Er central layer and upper and lower dielectric layers. © 2004 American Institute of Physics.


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