Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

Martín, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; i Cabarrocas, P. Roca
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1474
Academic Journal
A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiC[sub x]:H) deposition, without breaking the vacuum. We measured effective lifetime, τ[sub eff], through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. S[sub eff] values lower than 19 cm s[sup -1] were achieved using a hydrogen plasma treatment and an a-SiC[sub x]:H film deposited at 300 °C. © 2004 American Institute of Physics.


Related Articles

  • Enhancement of metal-semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition. Huang, C. J. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6501 

    This study presents a method for surface passivation using silicon dioxide (SiO[sub 2]). The proposed method has shown great effectiveness on metal-semiconductor barrier height enhancement. A high quality SiO[sub 2] layer is developed via liquid phase deposition, a method which naturally leaves...

  • Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size. Ruckschloss, M.; Landkammer, B. // Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1474 

    Examines the effect of crystallite size on the light emitting nanocrystalline (nc) silicon. Preparation of nc silicon by using the dry processing technique; Impact of oxygen passivation on photoluminescence (PL) stability; Relationship between PL intensity and oxidation time.

  • Hydrogen plasma enhancement of boron activation in shallow junctions. Vengurlekar, A.; Ashok, S.; Kalnas, C.E.; Theodore, N.D. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4052 

    The ability to activate large concentrations of boron at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on our experimental observations offering evidence for enhancement of electrical activation of implanted boron...

  • Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron. Kilanov, D. V.; Popov, V. P.; Safronov, L. N.; Nikiforov, A. I.; Sholz, R. // Semiconductors;Jun2003, Vol. 37 Issue 6, p620 

    Formation of interior hydrogen-passivated surfaces in hydrogen-implanted single-crystal Si containing a buried layer heavily doped with boron is investigated. With the use of the infrared absorption spectroscopy, it is shown that, upon annealing, the composition of hydrogen-containing defects in...

  • Copper passivation of dislocations in silicon. Lee, Jae-Gwang; Morrison, S. Roy // Journal of Applied Physics;12/15/1988, Vol. 64 Issue 12, p6679 

    Presents information on a study which introduced copper to passivate the defects in silicon materials and improve the efficiencies of solar cells. Examples of silicon materials that have a number of defects which degrade electrical properties; Methodology of the study; Results and discussion.

  • Record low surface recombination velocities on 1 omega cm p-silicon using remote plasma silicon.... Lauinger, Thomas; Schmidt, Jan // Applied Physics Letters;2/26/1996, Vol. 68 Issue 9, p1232 

    Investigates the surface passivation of low-resistivity single-crystalline p-silicon (p-Si) using silicon nitride in a plasma-enhanced chemical vapor deposition system. Determination of the effective surface recombination velocity; Comparison between plasma silicon nitride and thermal oxides;...

  • 15.9% efficiency solar cells on electromagnetic cold crucible cast multicrystalline silicon. Elgamel, H.E.; Ghannam, M.Y. // Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2171 

    Examines the effectiveness of hydrogen passivation on electromagnetically cased multicrystalline silicon. Effects of low oxygen content on hydrogen passivation; Fabrication of solar cell on hydrogen passivated multicrystalline silicon; Confirmation of the low oxygen content by Fourier transform...

  • Efficient defect passivation by hot-wire hydrogenation. Pileninger, R.; Wanka, H.N. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2169 

    Explores the passivation of bulk defects in polycrystalline silicon (Si) by hot-wire hydrogenation. Response of solar cells from polycrystalline Si; Improvement of minority carrier diffusion length of the solar cells; Effects of ion implantation and conventional plasma treatment on hydrogen...

  • Continuous growth of heavily doped p+-n+ Si epitaxial layer using low-temperature photoepitaxy. Yamazaki, Tatsuya; Minakata, Hiroshi; Ito, Takashi // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p879 

    Heavily doped p+ and n+ silicon epitaxial layers were continuously grown at 600 °C using photoenhanced epitaxy. The heavily phosphorus-doped photoepitaxial layer with a carrier concentration above 1×1017 cm-3 grown on the p- substrate shows very high density surface pits due to phosphorus...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics