Pulsed-electron-beam deposition of transparent conducting SnO[sub 2] films and study of their properties

Choudhary, R.J.; Ogale, S.B.; Shinde, S.R.; Kulkarni, V.N.; Venkatesan, T.; Harshavardhan, K.S.; Strikovski, M.; Hannover, B.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1483
Academic Journal
Transparent conducting films of SnO[sub 2] are grown on single-crystal R-Al[sub 2]O[sub 3] substrates by the pulsed electron beam deposition (PED) technique, and their electrical, optical, and microstructural properties are compared with the films grown by pulsed-laser deposition (PLD). In PED, the pulsed electron beam used for ablation is generated by a channel-spark system with discharge voltage of 12 kV, current ∼1 kA, and pulse duration of ∼100 ns. The PED films are highly oriented, show good epitaxy, and are highly transparent with transmittance of ∼80% in the visible and IR range. The measured band gap is close to 3.9 eV. It is shown that the PED film properties compare well with those of PLD films, with the [sup 119]Sn Mossbauer spectroscopy showing comparable local environments in the two. © 2004 American Institute of Physics.


Related Articles

  • Mössbauer study of 57Fe single-crystal films grown on (110) GaAs by MBE. Volkening, F. A.; Jonker, B. T.; Prinz, G. A.; Koon, N. C. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p5646 

    Examines the application of Mössbauer spectroscopy measurents in [sup57]iron single-crystal films grown on gallium arsenide (110) by molecular beam epitaxy. Details on the experiment; Results of the study; Discussion of findings.

  • Pulsed amplification of continuous-wave signal fields in photorefractive BaTiO[sub 3]. Vainos, N.A.; Mailis, S. // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1529 

    Demonstrates the pulsed amplification of continuous-wave (cw) optical signal field in phorefractive barium titanate crystal. Application of nonlinear mixing between signal field and a pulsed pump field; Behavior of pulsed-amplified cw signal output; Dependence of net photorefractive energy gain...

  • Mössbauer and SEM study of Fe–Al film. Sebastian, Varkey; Sharma, Ram Kripal; Lakshmi, N.; Venugopalan, K. // Hyperfine Interactions;2006, Vol. 169 Issue 1-3, p1383 

    Fe–Al alloy with Fe/Al ratio of 3:1 was first prepared by argon arc melting. It was subsequently coated on glass slide and cellophane tape using an electron beam gun system to have a thickness of 2,000 Å. X-ray diffraction spectrum of the coated sample indicates a definite texture for...

  • Magnetic and conversion electron Mo¨ssbauer spectral study of amorphous thin films of Dy[sub x]Fe[sub 100-x] and Dy[sub 20]Fe[sub 80-y]Co[sub y]. Fleury-Frenette, K.; Delwiche, J.; Grandjean, F.; Vandormael, D.; Long, Gary J. // Journal of Applied Physics;8/15/2001, Vol. 90 Issue 4, p1934 

    Amorphous thin films of DyFe and DyFeCoy, with various x and y values and of ~40 nm thickness, have been prepared by sputtering on polyimide films. Their magnetization curves and the Mssbauer spectra indicate that at 295 K the iron moments are preferentially...

  • 151Eu Mössbauer study on Fe/Eu multilayers. Baggio-Saitovitch, E.; Passamani, E. C.; Mibu, K.; Shinjo, T. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6483 

    Examines the magnetic properties of Fe/Eu multilayers by Mössbauer spectroscopy. Methodology; Sample characterization of the Fe/Eu multilayers; Results.

  • Electron beam induced crystallization of a Ge-Au amorphous film. Ba, Long; Qin, Yong; Wu, Ziqin // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6170 

    Presents a study which investigated the electron beam induced crystallization of a germanium-gold amorphous film. Microstructure of the as-deposited and annealed samples; Observation of electron beam-induced crystallization; Results.

  • Selective-area formation of Si microstructures using ultrathin SiO[sub 2] mask layers. Yasuda, T.; Hwang, D.S.; Park, J.W.; Ikuta, K.; Yamasaki, S.; Tanaka, K. // Applied Physics Letters;2/1/1999, Vol. 74 Issue 5, p653 

    Demonstrates silicon (Si) selective-area deposition using ultrathin SiO[sub 2] mask layers and resistless patterning by direct electron-beam (EB) irradiation. Enhancement of Si deposition by EB irradiation; Characterization of the growth area on the mask surface; Potential applications of the...

  • Local amorphous thin-film crystallization induced by focused electron-beam irradiation. Libera, M. // Applied Physics Letters;1/15/1996, Vol. 68 Issue 3, p331 

    Demonstrates the crystallization of amorphous 80 nanometer thin films of Ge[sub 48]Te[sub 52] by electron irradiation. Crystallization of the entire films annealed in the absence of electron irradiation; Occurrence of crystallization under focused-probe electron irradiation; Factor driving...

  • Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering. Karuppasamy, A.; Subrahmanyam, A. // Journal of Applied Physics;6/1/2007, Vol. 101 Issue 11, p113522 

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics