Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

Oila, J.; Kemppinen, A.; Laakso, A.; Saarinen, K.; Egger, W.; Liszkay, L.; Sperr, P.; Lu, H.; Schaff, W.J.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1486
Academic Journal
We have used a low-energy positron beam to identify In vacancies in InN layers grown on Al[sub 2]O[sub 3] by molecular beam epitaxy. Their concentration decreases from ∼5×10[sup 18] to below 10[sup 16] cm[sup -3] with increasing layer thickness (120–800 nm). The decrease in the vacancy concentration coincides with the increase in the electron Hall mobility, suggesting that In vacancies act as electron scattering centers. © 2004 American Institute of Physics.


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