Epitaxial GaN[sub 1-y]As[sub y] layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy

Kimura, Akitaka; Paulson, C.A.; Tang, H.F.; Kuech, T.F.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1489
Academic Journal
GaN[sub 1-y]As[sub y] epitaxial alloy samples with [N]>[As] were grown by metalorganic vapor phase epitaxy. The range of As content achieved, up to y=0.067, greatly extends the range of achievable As levels to values that are well within the miscibility gap of the GaN–GaAs system. The single-phase epitaxial nature of the alloy samples was confirmed by x-ray diffraction. The As-content dependence of the band gap was determined by optical absorption measurements. A highly-bowed bandgap was observed as a function of the As content, and a refined value of the bowing parameter of 16.9±1.1 eV was determined. © 2004 American Institute of Physics.


Related Articles

  • Metalorganic vapor-phase epitaxy of cubic Al[sub x]Ga[sub 1-x]N alloy on a GaAs (100) substrate. Nakadaira, Atsushi; Tanaka, Hidenao // Applied Physics Letters;5/19/1997, Vol. 70 Issue 20, p2720 

    Examines the metalorganic vapor-phase epitaxy of cubic aluminum-gallium-nitrogen alloy on a gallium arsenide substrate. Effects of the high-growth-temperature gallium nitride layer on the Al[sub x]Ga[sub 1-x]N; Information on AIN molar fraction control; Details on the photoluminescence peak...

  • Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering. Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S. // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p661 

    Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 °C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth...

  • Rocking curve peak shift in thin semiconductor layers. Wie, C. R. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p985 

    Describes an x-ray diffraction method for determining layer composition and mismatch. Data on the rocking curves of a gallium arsenide epitaxial layer doped with an isoelectronic dopant; Plot of the separation between epilayer peak and substrate peak as a function of layer thickness.

  • Epitaxial growth of GaAs films from elemental arsenic. Chu, Shirley S.; Chu, T. L.; Green, R. F.; Cerny, C. // Journal of Applied Physics;6/15/1991, Vol. 69 Issue 12, p8316 

    Deals with a study which investigated the metalorganic vapor phase epitaxial growth of gallium arsenide using trimethylgallium or triethylgallium and elemental arsenic in hydrogen under atmospheric and reduced pressures. Discussion of the epitaxial growth of gallium arsenide; Structural and...

  • Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source. Song, J.D.; Kim, J.M.; Lee, Y.T. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 5, p625 

    Abstract. High-quality, lattice-matched InGaP on exact (100) GaAs was successfully grown by molecular beam epitaxy with a GaP decomposition source. The ordering parameter (eta) of the InGaP is investigated as a function of the growth temperature, eta is as low as 0.22 and almost insensitive to...

  • Investigation of GaAs/Si material by x-ray double-crystal diffraction. Li, Chaorong; Mai, Zhenhong; Cui, Shufan; Zhou, Junming; Wang, Yutian // Journal of Applied Physics;10/15/1991, Vol. 70 Issue 8, p4172 

    Presents a study that investigated gallium arsenide epilayer films on silicon substrates grown by molecular-beam epitaxy by the x-ray double-crystal diffraction method. Growth process of the epilayers; Function of SLS in improving the quality of gallium arsenide epilayers; Relative perfection...

  • Quantitative determination of the order parameter in epitaxial layers of ZnSnP[sub 2]. Francoeur, S.; Seryogin, G. A.; Seryogin, G.A.; Nikishin, S. A.; Nikishin, S.A.; Temkin, H. // Applied Physics Letters;4/10/2000, Vol. 76 Issue 15 

    X-ray diffraction is applied to determine the degree of order in partially ordered epitaxial layers of ZnSnP[sub 2] grown on GaAs. The Bragg-Williams order parameter, used as a scaling coefficient for the structure factor of superstructure reflections, is extracted from the comparison of...

  • Characterization of strained quantum wells by high-resolution x-ray diffraction. Finkelstein, Y.; Zolotoyabko, E.; Blumina, M.; Fekete, D. // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p1869 

    Presents a study which examined the GaAs/GaInAs/GaAs quantum-well structures grown by metalorganic chemical vapor deposition using high-resolution x-ray diffractrometry and photoluminescence techniques. Experimental procedure; Results of the study; Conclusions.

  • A study of layer composition of InGaAs/InP multiquantum wells grown by metalorganic chemical vapor deposition using double-crystal x-ray diffraction theory and experiment. Barnett, S. J.; Brown, G. T.; Courtney, S. J.; Bass, S. J.; Taylor, L. L. // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1185 

    Presents a study of layer composition of indium gallium arsenide/indium phosphide multiquantum wells grown by metalorganic chemical vapor deposition using double-crystal x-ray diffraction theory and experiment. Theoretical approach; Experimental procedure; Results; Discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics