TITLE

Epitaxial GaN[sub 1-y]As[sub y] layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy

AUTHOR(S)
Kimura, Akitaka; Paulson, C.A.; Tang, H.F.; Kuech, T.F.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1489
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN[sub 1-y]As[sub y] epitaxial alloy samples with [N]>[As] were grown by metalorganic vapor phase epitaxy. The range of As content achieved, up to y=0.067, greatly extends the range of achievable As levels to values that are well within the miscibility gap of the GaN–GaAs system. The single-phase epitaxial nature of the alloy samples was confirmed by x-ray diffraction. The As-content dependence of the band gap was determined by optical absorption measurements. A highly-bowed bandgap was observed as a function of the As content, and a refined value of the bowing parameter of 16.9±1.1 eV was determined. © 2004 American Institute of Physics.
ACCESSION #
12360971

 

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