Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors

Fitch, R.C.; Gillespie, J.K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.; La Roche, J.R.; Ren, F.; Pearton, S.J.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1495
Academic Journal
Measurement of the electrical characteristics of 250 devices on the same 2 in. diameter wafer shows that Ti/Al/Ir/Au Ohmic contacts on AlGaN/GaN high electron mobility transistors (HEMTs) have lower average specific contact resistance after annealing at 850 °C for 30 s (4.6×10[sup -5] Ω cm[sup 2]) compared to more standard Ti/Al/Ni/Au contacts (2×10[sup -4] Ω cm[sup 2]). HEMTs with these Ir-based contacts also show average interdevice isolation currents approximately a factor of 2 lower, higher peak transconductance (134 mS/mm compared to 121 mS/mm), and higher device breakdown voltage (31 V compared to 23 V) than the devices with Ni-based contacts. This Ir-based contact metallurgy looks promising for applications requiring extended thermal stability of the HEMTs. © 2004 American Institute of Physics.


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