TITLE

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(1120) 4H–SiC interface

AUTHOR(S)
Dhar, S.; Song, Y.W.; Feldman, L.C.; Isaacs-Smith, T.; Tin, C.C.; Williams, J.R.; Chung, G.; Nishimura, T.; Starodub, D.; Gustafsson, T.; Garfunkel, E.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1498
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nitric oxide postoxidation anneal results in a significant decrease of defect state density (D[sub it]) near the conduction bandedge of n-4H–SiC at the oxide/(1120) 4H–SiC interface. Comparison with measurements on the conventional (0001) Si-terminated face shows a similar interface state density following passivation. Medium energy ion scattering provides a quantitative measure of nitrogen incorporation at the SiO[sub 2]/SiC interface. © 2004 American Institute of Physics.
ACCESSION #
12360968

 

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