Electrical properties of Pt contacts on p-GaN activated in air

Yow-Jon Lin; Kuo-Chen Wu, Y.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1501
Academic Journal
In this study, the electrical properties of Pt contacts on p-type GaN (p-GaN) activated in air were investigated. From the observed photoluminescence result, it is suggested that the hydrogenated Ga vacancies (i.e., V[sub Ga]H[sub 2]) were formed during the activation process. However, V[sub Ga]H[sub 2] in p-GaN near the surface was transformed into V[sub Ga] after Pt deposition, because Pt strongly absorbed hydrogen. A large number of V[sub Ga] at the Pt/p-GaN interface would lead to the pinning of the Fermi level at 0.3 eV above the valence-band edge, as well as the formation of the low barrier at the interface, and the formation of the nonalloyed ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface. © 2004 American Institute of Physics.


Related Articles

  • Ohmic contacts to p-type GaN mediated by polarization fields in thin In[sub x]Ga[sub 1-x]N capping layers. Gessmann, T.; Li, Y.-L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, J. K. // Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p986 

    Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability...

  • Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH[sub 3]CSNH[sub 2] solution. Song, June O; Park, Seong-Ju; Seong, Tae-Yeon // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3129 

    We investigate the effect of CH[sub 3]CSNH[sub 2] solution treatment on Ti/Al ohmic contacts to n-GaN:Si (3×10[sup 18] cm[sup -3]). It is shown that the sulfide treatment results in a drastic increase in the photoluminescence intensity, compared with that of the untreated sample....

  • Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. Zhou, L.; Lanford, W.; Ping, A. T.; Ping, A.T.; Adesida, I.; Yang, J. W.; Yang, J.W.; Khan, A. // Applied Physics Letters;6/5/2000, Vol. 76 Issue 23 

    Electrical properties of Ti (15 nm)/Pt (50 nm)/Au (80 nm) contacts on moderately doped p-GaN (N[sub A]=3.0x10[sup 17] cm[sup -3]) are reported. Linear current-voltage characteristics were observed after annealing the contacts for 1 min at temperatures above 700 °C. The best ohmic contacts...

  • Electronic transport mechanisms of nonalloyed Pt Ohmic contacts to p-GaN. Jang, Ja-Soon; Ja-Soon Jang; Seong, Tae-Yeon; Tae-Yeon Seong // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    We report on the electronic transport mechanisms for nonalloyed Pt Ohmic contacts to p-GaN which were surface treated using a buffered oxide etch solution and (NH[sub 4])[sub 2]S[sub x]. Measurements show that the value of the effective Richardson constant (A[sup **]) is 12 A cm-2 K-2, which is...

  • Low-resistance ohmic contacts to p-type GaN. Li, Y.-L.; Schubert, E. F.; Schubert, E.F.; Graff, J. W.; Graff, J.W.; Osinsky, A.; Schaff, W. F.; Schaff, W.F. // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    The specific contact resistance of two types of ohmic contacts to p-type GaN is analyzed. First, an ohmic contact formed by a metal electrode deposited on a highly doped p-type GaN layer. Second, an ohmic contact formed by a metal electrode deposited on a thin GaN layer with an internal electric...

  • Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN. Lin, Yow-Jon; Yow-Jon Lin; Lee, Ching-Ting; Ching-Tee Lee // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0x10[sup -5] Ω cm[sup 2] for the Ti/Al nonalloyed...

  • Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN. Huh, Chul; Kim, Sang-Woo; Kim, Hyun-Min; Kim, Dong-Joon; Park, Seong-Ju // Applied Physics Letters;3/26/2001, Vol. 78 Issue 13, p1942 

    The effects of an alcohol-based (NH[sub 4])[sub 2]S solution [t-C[sub 4]H[sub 9]OH+(NH[sub 4])[sub 2]S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x10[sup -2] to 4.71x10[sup -5] Ω cm[sup 2] as a...

  • Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl[sub 2] inductively coupled plasma. Jang, Ho Won; Jeon, Chang Min; Kim, Jong Kyu; Lee, Jong-Lam // Applied Physics Letters;4/2/2001, Vol. 78 Issue 14, p2015 

    A room-temperature Ti/Al Ohmic contact on n-type GaN was obtained by surface treatment using Cl[sub 2] inductively coupled plasma treatment. The specific contact resistivity was dramatically decreased from the Schottky behavior to 9.4x10[sup -6] Ω cm[sup 2] by the treatment. The binding...

  • Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN layers. Lee, Ching-Ting; Lin, Yow-Jon; Lin, Chun-Hung // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p3825 

    We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH[sub 4])[sub 2]S[sub x]-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH[sub 4])[sub 2]S[sub x] solution. The resultant Ga/N...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics