TITLE

Electrical properties of Pt contacts on p-GaN activated in air

AUTHOR(S)
Yow-Jon Lin; Kuo-Chen Wu, Y.
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this study, the electrical properties of Pt contacts on p-type GaN (p-GaN) activated in air were investigated. From the observed photoluminescence result, it is suggested that the hydrogenated Ga vacancies (i.e., V[sub Ga]H[sub 2]) were formed during the activation process. However, V[sub Ga]H[sub 2] in p-GaN near the surface was transformed into V[sub Ga] after Pt deposition, because Pt strongly absorbed hydrogen. A large number of V[sub Ga] at the Pt/p-GaN interface would lead to the pinning of the Fermi level at 0.3 eV above the valence-band edge, as well as the formation of the low barrier at the interface, and the formation of the nonalloyed ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface. © 2004 American Institute of Physics.
ACCESSION #
12360967

 

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