TITLE

Low resistance and transparent Ni–La solid solution/Au ohmic contacts to p-type GaN

AUTHOR(S)
June-O Song, H.L.; Dong-Seok Leem; Kwak, J.S.; Lee, S.N.; Nam, O.H.; Park, Y.; Tae-Yeon Seong
PUB. DATE
March 2004
SOURCE
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the formation of reliable Ni–La solid solution (8 nm)/Au (8 nm) ohmic contacts to p-type GaN (N[sub a]=5×10[sup 17] cm[sup -3]). The as-deposited contact reveals nonlinear current–voltage (I–V) characteristics. However, the contacts show considerably improved I–V behavior when annealed at temperatures of 350–550 °C for 1 min in air ambient. For example, the specific contact resistance as low as 7.2×10[sup -5] Ω cm[sup 2] is obtained from the samples annealed at 550 °C, whose transmittance is measured to be 82.5% at a wavelength of 470 nm. Based on Auger electron spectroscopy and x-ray photoemission spectroscopy results, possible ohmic formation mechanisms for the annealed contacts are described and discussed. © 2004 American Institute of Physics.
ACCESSION #
12360966

 

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