Turnaround of hysterisis for capacitance–voltage characteristics of hafnium oxynitride dielectrics

Wang, J.C.; Shie, D.C.; Lei, T.F.; Lee, C.L.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1531
Academic Journal
The capacitance–voltage (C–V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors with different sweep voltage were investigated. It was found that, for the p-type substrate MOS capacitor, the C–V hysterisis has a turnaround characteristic as the applied voltage exceeds -3.0 V. The phenomenon is explained by electron trappings at the low electric field and hole trappings, which resulted from the impact ionization, at the high electric field in the dielectrics. © 2004 American Institute of Physics.


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