Field emission from gallium-doped zinc oxide nanofiber array

Xu, C.X.; Sun, X.W.; Chen, B.J.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1540
Academic Journal
Gallium-doped nanostructural zinc oxide fibers have been fabricated by vapor-phase transport method of heating the mixture of zinc oxide, gallium oxide, and graphite powders in air. The zinc oxide fibers grew along [002] direction, forming a vertically aligned array that is predominantly perpendicular to the substrate surface. With a gallium doping concentration of 0.73 at. %, the corresponding carrier concentration and resistivity were 3.77×10[sup 20] cm[sup -3] and 8.9×10[sup -4] Ω cm, respectively. The field emission of these vertically aligned ZnO fiber arrays showed a low field emission threshold (2.4 V/μm at a current density of 0.1 μA/cm[sup 2]), high current density, and high field enhancement factor (2317). The dependence of emission current density on the electric field followed Fowler–Nordheim relationship. The enhanced field emission is attributed to the aligned structure, good crystal quality, and especially, the improved electrical properties (increased conductivity and reduced work function) of the nanofibers due to gallium doping. © 2004 American Institute of Physics.


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