Anomalous charge transport behavior of Fullerene based diodes

Matt, G.J.; Sariciftci, N.S.; Fromherz, T.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1570
Academic Journal
We observed an anomalous voltage–current (V–I) characteristics of fullerene based diodes in the low temperature regime. The diodes exhibit a negative differential resistance and voltage hysteresis for opposite current sweep directions. This behavior is directly observable at temperatures below 95 K and indicates the formation of highly conductive filaments in the fullerene thin films. © 2004 American Institute of Physics.


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