Thin-film field-effect transistors based on La-doped SrTiO[sub 3] heterostructures

Feng Pan; Olaya, David; Price, John C.; Rogers, Charles T.
March 2004
Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1573
Academic Journal
Field-effect transistors have been fabricated from epitaxial perovskite strontium titanate heterostructures. Lanthanum-doped SrTiO[sub 3] was used as the semiconducting channel while insulating SrTiO[sub 3] was used as a gate insulator. Both depletion and accumulation effects in the channel have been studied from 300 to 4 K. Hall effect measurements indicate a temperature independent n-type carrier density around 5×10[sup 19] cm[sup -3]. At 300 K, typical mobilities are 2–3 cm[sup 2] V[sup -1] s[sup -1] while low temperature mobilities are as high as 15 cm[sup 2] V[sup -1] s[sup -1]. © 2004 American Institute of Physics.


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